View 2SK3788-01_427566.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SK3788-01
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
200406
FUJI POWER MOSFET
Super FAP-G Series
Features
High speed switching, Low on-resistance Low driving power, Avalanche-proof No secondary breadown
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings (Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Maximum Avalanche current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID ID(puls] VGS IAR EAS EAR dVDS/dt dV/dt PD Tch Tstg Ratings 150 150 92 368 30 92 1205.7 41 20 5 410 2.50 +150 -55 to +150 Unit V V A A V A mJ mJ Remarks VGS=-30V
Equivalent circuit schematic
Drain(D)
Gate(G)
Note *1 Note *2 Note *3
Source(S) Note *1:Tch < 150C,Repetitive and Non-repetitive = Note *2:StartingTch=25C,IAS=37A,L=1.29mH, VCC=48V,RG=50 EAS limited by maximum channel temperature and avalanch current. See to the `Avalanche Energy' graph Note *3:Repetitive rating:Pulse width limited by maximum channel temperature. See to the `Transient Theemal impedance' graph < < Note *4:IF= -ID, -di/dt=50A/s,VCC BVDSS,Tch< 150C = =
kV/s VDS= 150V < kV/s Note *4 Tc=25C W Ta=25C C C
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-Source Breakdown Voltaget Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcondutance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time ton Turn-Off Time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VSD trr Qrr Symbol Rth(ch-c) Rth(ch-a)
Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=150V VGS=0V Tch=25C Tch=125C VDS=120V VGS=0V VGS=30V VDS=0V ID=46A VGS=10V ID=46A VDS=25V VDS=75V VGS=0V f=1MHz VCC=48V ID=46A VGS=10V RGS=10 VCC=75V ID=92A VGS=10V IF=92A VGS=0V Tch=25C IF=92A VGS=0V -di/dt=100A/s Tch=25C Test Conditions channel to case channel to ambient
Min.
150 3.0
Typ.
Max.
5.0 25 250 100 26
Units
V V A nA m S pF
12
21 24 3800 5400 530 795 35 52.5 40 60 112 168 56 84 30 45 80 120 30 45 25 38 1.20 1.50 250 2.0
ns
nC
V ns C
Thermalcharacteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd
Min.
Typ.
Max.
0.305 50.0
Units
C/W C/W
1
2SK3788-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
FUJI POWER MOSFET
500
140
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
120 400 100
20V 10V
8V
PD [W]
ID [A]
300
80
60 200 40
7V
6.5V 100 20 VGS=6.0V
0 0 25 50 75 100 125 150
0 0 5 10
Tc [C]
VDS [V]
100
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25C
100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25C
10
10
ID[A]
1 1
0.1 0.1 0.1
gfs [S]
0
1
2
3
4
5
6
7
8
9
10
1
10
100
VGS[V]
ID [A]
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25C 0.15
VGS=6V 6.5V 7V
0.15
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=36.5A,VGS=10V
RDS(on) [ ]
0.10
0.10
RDS(on) [ ]
max. 0.05
0.05 8V 10V 20V
typ.
0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
0.00 -50 -25 0 25 50 75 100 125 150
ID [A]
Tch [C]
2
2SK3788-01
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
FUJI POWER MOSFET
7.0 6.5 6.0 5.5 5.0
14
Typical Gate Charge Characteristics VGS=f(Qg):ID=92A,Tch=25 C
12 Vcc= 30V max. 75V 10 120V
VGS(th) [V]
4.5
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min.
VGS [V]
4.0
8
6
4
2
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
Tch [C]
Qg [nC]
10
4
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
Ciss
1000
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25C
10
3
100
Coss
C [pF]
10
2
IF [A]
Crss
-1 0 1 2 3
10
10
1
1
10
0
10
10
10
10
10
0.1 0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VDS [V]
VSD [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10
1400
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)<=92A
IAS=37A
1200 tr 1000 10
2
td(off) td(on) tf 800 IAS=56A
EAV [mJ]
t [ns]
600 IAS=92A 400
10
1
200
10
0
0
0
10
10
1
10
2
10
3
0
25
50
75
100
125
150
ID [A]
starting Tch [C]
3
2SK3788-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25 C,Vcc=48V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10 -8 10
-2
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
10
1
Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/fdt/scd/
4

▲Up To Search▲

Price & Availability of 2SK3788-01

	To Download 2SK3788-01 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .